? 2005 ixys all rights reserved g = gate d = drain s = source tab = drain ds99426(07/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 100 a 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 1.6 ? pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet advance technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (ixta) to-220 (ixtp) d (tab) g s g s (tab) ixta 5n60p ixtp 5n60p v dss = 600 v i d25 = 5 a r ds(on) 1.6 w symbol test conditions maximum ratings v dss t j = 25 c to 175 c 600 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c5a i dm t c = 25 c, pulse width limited by t jm 10 a i ar t c = 25 c5a e ar t c = 25 c20mj e as t c = 25 c 100 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 2.8 4.5 s c iss 750 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 78 pf c rss 6.3 pf t d(on) 18 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 18 ns t d(off) r g = 50 ? (external) 45 ns t f 16 ns q g(on) 14.2 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 4.8 nc q gd 4.8 nc r thjc 1.25 k/w r thck (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 5 a i sm repetitive 15 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 5 a 500 ns -di/dt = 100 a/ s pins: 1 - gate 2 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline ixta 5n60p ixtp 5n60p
? 2005 ixys all rights reserved ixta 5n60p ixtp 5n60p fig. 2. extended output characteristics @ 25 o c 0 1 2 3 4 5 6 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 9v 6v 5v 7v 8v fig. 3. output characteristics @ 125 o c 0 0.5 1 1.5 2 2.5 3 0 4 8 12162024 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 0.5 1 1.5 2 2.5 3 024 681012 v d s - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 3a i d = 1.5a v gs = 10v fig. 6. drain current vs. case temperature 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 01 2345 i d - amperes r d s ( o n ) - normalized t j = 25 o c v gs = 10v t j = 125 o c
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 ixta 5n60p ixtp 5n60p fig. 11. capacitance 1 10 100 1000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c os c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 02468101214161820 q g - nanocoulombs v g s - volts v ds = 250v i d = 1.5a i g = 10ma fig. 7. input adm ittance 0 0.5 1 1.5 2 2.5 3 3.5 3.544.555.566.577.5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 0.5 1 1.5 2 2.5 00.511.522.533.54 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 1 2 3 4 5 6 7 8 9 0.40.5 0.60.70.80.9 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. for w ar d-bias safe operating area 0.1 1 10 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 o c t c = 25 o c r ds(on) limit 10ms 25s
? 2005 ixys all rights reserved ixta 5n60p ixtp 5n60p fig. 13. maximum transient thermal resistance 0.1 1.0 10.0 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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